Samsung is developing a special type of DRAM, the LLW (Low Latency Wide IO) that is apparently better than traditional LPDDR solutions. The LLW DRAM solution allows memory and logic circuits to be integrated vertically allowing for better efficiency and latency.
The LLW is virtually integrated alongside the processor itself within the SoC and so, resulting in better efficiency and latency. This is why it is speculated that LLW DRAM solutions might make their way to future Galaxy devices since they are apparently better suited for real-time processing scenarios, one of which is on-device AI, a major focus for Samsung devices moving forward.
Samsung Semiconductor recently posted a video to X showcasing the LLW DRAM and how it is suitable for smartphones, laptops and even VR headsets. This does point to the fact that perhaps Samsung may use the LLW DRAM solution within its upcoming XR headset.
Samsung first showcased the LLW DRAM at Tech Day at the start of this year, and then again at Memory Tech Day alongside its LPDDR5X CAMM2 solutions.
Aside from that, the video also showcases a phone with LLW DRAM integrated into it, and so, it seems as if the future Galaxy devices may feature the same solution, resulting in improved performance numbers. The phone showcased within the advert did resemble a lot to the current-gen Samsung devices, most probably similar to the S24 series.
Now, with rumours pointing to a potentially new design within the S25 lineup, it seemed as if Samsung’s advert pointed to the LLW DRAM solution being utilized by the S24 series. Samsung is also not the first company to implement LLW — Apple’s Vision Pro apparently packages the R1 chip with LLW DRAM using Fan-Out Wafer-Level Packaging (FOWLP).
This is all we know for now, but rest assured that we will keep you updated as new information becomes available.